BDW36 transistor equivalent, silicon npn power transistor.
*Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATIN.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 180V(Min)
*High Switching Speed
*Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 10A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
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